Improvement of Corrosion Process for Gate Commutated Thyristor Chips

Abstract

In recent years, with the continuous development of installed grid capacity and renewable energy, DC power transmission and distribution technologies have developed rapidly. As one of the most important high power semiconductor devices, the integrated gate commutated thyristor (IGCT) has great potential in DC grid application. The gate-cathode blocking property is the key for device packaging and working. Based on the corrosion process of the GCT chip, two methods are proposed for improving the consistency of gate-cathode blocking voltage in this paper.